ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,575, issued on April 21, was assigned to Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO ('s-Gravenhage, Nether... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,576, issued on April 21, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "Gate structure over corner segment of semiconductor reg... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,577, issued on April 21, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Vertical field-effect transistor and method for its form... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,578, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Work function control in gate str... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,579, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method o... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,580, issued on April 21, was assigned to Renesas Electronics Corp. (Tokyo). "Vertical MOSFET super junction device and method of manufactu... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,582, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-layered source and drain contacts for a thin film trans... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,583, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Method for manufacturing semiconductor device" was invented by Takuya Kiku... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,584, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Selective growth of high-k oxide on channel of gate-all-aroun... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,585, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More